发表论文_苏州以诺半导体有限公司

发表论文

我们期待与国内国际优秀的研究单位、科技企业展开真诚而高效的合作。我们研制了不同的III/V族半导体外延材料和器件，满足我们客户的研发生产需求。我们希望能与更多优秀的科技人才交流合作，发生激烈的思想碰撞，产生出新技术新思维的火花，促进半导体技术不断向前发展。联系邮箱：innovosemi@163.com。

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si Yi Sun et al., NATURE PHOTONICS
Crack-free 2.2 µm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications Xiaoning Zhan et al., Journal of Physics D: Applied Physics
Wafer-scale crack-free 10 µm-thick GaN with a dislocation density of 5.8 × 107 cm−2 grown on Si Jianxun Liu et al., Journal of Physics D: Applied Physics
Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact Junlei He et al., Applied Physics Express
Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2 Xiaolu Guo et al., IEEE Transactions on Electron Devices
Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination Xiaolu Guo et al., Applied Physics Letters
GaN-based ultraviolet microdisk laser diode grown on Si Jin Wang et al., Photonics Research